Характеристики
IGBT MODULE, 1200V, 6 PACK
Transistor Type IGBT
Transistor Polarity N
Voltage, Vces 1200V
Current Ic Continuous a Max 22A
Voltage, Vce Sat Max 2.1V
Case Style SEMITOP 2
Collector-to-Emitter Breakdown Voltage 1200V
Current Ic Continuous b Max 15A
Current Ic av 22A
Current, Icm Pulsed 44A
External Depth 28mm
Fixing Centres 38mm
Fixing Hole Diameter 2mm
Power, Pd 1600W
SMD Marking SEMITOP2
Temperature, Current 25 C
Time, Rise 20ns
Transistors, No. of 6
Width, External 40.5mm
Voltage 1200V