Характеристики
IGBT MODULE, 6 PACK
Transistor Type IGBT Module
Transistor Polarity N Channel
Voltage, Vces 1200V
Current Ic Continuous a Max 40A
Voltage, Vce Sat Max 3.3V
Case Style SEMITRANS 6
Termination Type Screw
Collector-to-Emitter Breakdown Voltage 1200V
Current Ic Continuous b Max 25A
Current Ic av 40A
Current, Icm Pulsed 70A
External Depth 45mm
External Length / Height 24mm
Fixing Centres 93mm
Fixing Hole Diameter 5.5mm
Power, Pd 200W
Power, Ptot 200W
Temperature, Current 25 C
Time, Rise 55ns
Transistors, No. of 6
Width, External 105mm