Характеристики
IRF5802TRPBFThe IRF5802TRPBF is a HEXFET® single N-channel Power MOSFET offers low gate-to-drain charge to reduce switching losses. It is suitable for high frequency DC-to-DC converters, DC switches and load switch.
• Fully characterized avalanche voltage and current
• Fully characterized capacitance including effective COSS to simplify design
• Halogen-free
Транзисторы / Полевые транзисторы / Одиночные MOSFET транзисторы
Корпус: TSOP6, инфо: Полевой транзистор, N-канальный, 150 В, 0.9 А, 2 Вт