IPB049NE7N3GATMA1, МОП-транзистор, N Канал, 80 А, 75 В

Характеристики

IPB049NE7N3GATMA1, МОП-транзистор, N Канал, 80 А, 75 В The IPB049NE7N3 G is a N-channel Power MOSFET with OptiMOS™ technology specializes in synchronous rectification applications. Based on the leading 80V technology these 75V products feature simultaneously lowest ON-state resistances and superior switching performance.

• Best switching performance
• World’s lowest RDS (ON)
• Very low Qg and Qgd
• Excellent gate charge x RDS (ON) product (FOM)
• MSL1 rated
• Increased efficiency
• Highest power density
• Less paralleling required
• Smallest board-space consumption
• Easy-to-design products
• Ideal for high frequency switching and DC-to-DC converters
• Normal level
• 100% avalanche tested
• Qualified according to JEDEC for target applications
• Halogen-free, Green device

Полупроводники — ДискретныеТранзисторыМОП-транзисторы