Характеристики
BD679, NPN транзистор, [TO-126]The BD679 is a 60V Silicon NPN Complementary Power Darlington Transistor manufactured in planar base island technology with monolithic Darlington configuration. Monolithic Darlington configuration with integrated anti parallel collector-emitter diode. Fast switching times and very low saturation voltage resulting in reduced switching and conduction losses.
• Good hFE linearity
• High fT frequency
• Well-controlled hFE parameter for increased reliability