IPB144N12N3GATMA1, МОП-транзистор, N Канал, 41 А, 120 В

Характеристики

IPB144N12N3GATMA1, МОП-транзистор, N Канал, 41 А, 120 В The IPB144N12N3 G is an OptiMOS™ N-channel Power MOSFET offers at the same time the lowest ON-state resistances of the industry and the fastest switching behaviour, allowing for the achievement of outstanding performance in a wide range of applications. The 120V OptiMOS™ technology gives new possibilities for optimized solutions.

• Excellent switching performance
• World’s lowest RDS (ON)
• Very low Qg and Qgd
• Excellent gate charge x RDS (ON) product (FOM)
• MSL1 rated 2
• Environmentally friendly
• Increased efficiency
• Highest power density
• Less paralleling required
• Smallest board-space consumption
• Easy-to-design products
• Qualified according to JEDE for target applications
• Halogen-free, Green device
• Ideal for high-frequency switching and synchronous rectification
• Normal level

Полупроводники — ДискретныеТранзисторыМОП-транзисторы