Характеристики
IGBT MODULE, 2X1200V; Transistor Type:Dual Trench IGBT; Current, Ic Continuous a Max:300A; Voltage, Vce Sat Max:2.15V; Case Style:SEMiX 2s; Current, Ic av:300A; Current, Icm Pulsed:400A; Current, Ifs Max:1300A; Time, Rise:100ns; Voltage, Vceo:1.2V; Voltage, Vrrm:1200V