Характеристики
SKM22GD101D Three-Phase Bridge IGBT Power Module — With inverse diode Semikron Circuits Per Package=1 V(BR)CES (V)=1.0k V(BR)GES (V)=20 I(C) Abs.(A) Collector Current=22 Absolute Max. Power Diss. (W)=150 I(CES) Min. (A)=500u I(GES) Max. (A)=100n V(CE)sat Max.(V)=4.0 t(r) Max. (s) Rise time=100n t(d)off Max. (s) Off time=150n t(f) Max. (s) Fall time.=500n Package=Module-q
SKM22GD101D 1000V 22A IGBT MODULE SEMITRANS M SEMIKRON DATASHEET